Small-Signal Modeling of InGaN/GaN LEDs: Understanding Injection and Recombination Processes
The InGaN/GaN LEDs have been experiencing low efficiency at high carrier injections, the phenomenon known as the efficiency droop. The origin of efficiency droop has been the subject of debate for long time. Here, using small-signal modeling of the LEDs, which enables accurate evaluations of various recombination and injection efficiency, we are investigating the potential mechanisms behind the droop. This further enables us to design more optimized LEDs with less droop required for applications in general lighting as well as communication (Photo credit: Virginia Commonwealth University).
