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PUBLICATIONS

“The joy of discovery is certainly the liveliest that the mind of man can ever feel”

- Claude Bernard -

Journal and Conference Proceeding Publications

2018

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  1. M. Monavarian, A. Aragon, A. Rashidi, M. Nami, S. H. Oh, S. P. Den- Baars, D. Feezell, High-speed semipolar (20-2-1) InGaN/GaN singleand multiple-quantum-well LEDs with high internal quantum efficiency. (Under Preparation)

  2. A. Rashidi, M. Monavarian, A. Aragon, A. Rishinaramangalam, and D. Feezell, Determination of injection efficiency and its role in efficiency droop in III-nitride light-emitting diodes. (Under Preparation)

  3. D.F. Feezell and M. Monavarian, Comparison of Wavefunction Overlaps in Thin and Thick InGaN/GaN Polar and Nonpolar Quantum-Well Active Regions. (Under Preparation)

  4. M. Nami, A. Rashidi, M. Monavarian, M. Peysokhan, A. K. Rishinaramangalam, I. Stricklin, I. Brener, S. R. J. Brueck, and D. Feezell, GHz Bandwidth GaN/InGaN Core-Shell Nanowire-Based Micro-LEDs for High-Speed Visible Light-Communication. 2018 Compound Semiconductor
    Week. (Submitted)

  5. M. Monavarian, A. Rashid, A. A. Aragon, S. H. Oh, A. K. Rishinaramangalam, S. P. DenBaars, and D. Feezell, Orientation-dependent Modulation Response of High-Speed InGaN/GaN Blue Light-Emitting Diodes for Visible-Light Communication. 2018 Compound Semiconductor
    Week. (Submitted)

  6. M. Monavarian, S. Metzner, N. Izyumskaya, S. Das, V. Avrutin, U. Ozgur, F. Bertram, J. Christen, and H. Morkoc, Enhanced indium incorporation in semipolar (11-22)-oriented InGaN light emitting diodes. Journal of Crystal Growth. (Submitted)

  7. R. Eller, A. Rashidi, A. Rishinaramangalam, M. Monavarian, and D. Feezell, Gallium-nitride-based superluminescent diodes for smart lighting systems. 2018 DOE SSL Workshop. (Accepted)

  8. H. Qu, W. Fan, A. Rishinaramangalam, M. Monavarian, D. Feezell, S. Natarajan, C. Tomek, G. Shaffe, and B. Kozak, TaC Coated Wafer Carrier for GaN MOCVD for Blue Light LEDLight-Emitting Diodes. 2018 CSManTech. (Accepted)

  9. A. Rashidi, M. Monavarian, A. Aragon, D. Feezell, Nonpolar m-Plane InGaN/GaN Micro-Scale Light-Emitting Diode with 1.5 GHz Modulation Bandwidth. IEEE Electron Device Letters. (Accepted)

  10. M. Monavarian, A. Rashid, A. A. Aragon, S. H. Oh, A. K. Rishinaramangalam, S. P. DenBaars, and D. Feezell, Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes. Applied Physics Letters 112, 041104 (2018).

  11. S. Mishkat-Ul-Masabihi, A. Rishinaramangalam, M. Monavarian, M. Nami, and D. Feezell, Nanoporous distributed Bragg reflectors on freestanding nonpolar m-plane GaN. Applied Physics Letters 112, 041109 (2018).

  12. M. A. Reshchikov, N. M. Albarakat, M. Monavarian, V. Avrutin, and H. Morkoc, Thermal quenching of the yellow luminescence in GaN. Journal of Applied Physics 123, 161520 (2018).                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                           

  13. M. Monavarian, A. Rashidi, A. Aragon, S. H. Oh, M. Nami, S. P. DenBaars, D. Feezell, “Explanation of low efficiency droop in semipolar  InGaN/GaN LEDs through evaluation of carrier recombination coefficients”, Optics Express 25, 19343 (2017). (Selected as Editor’s Pick)

  14. A. Rashidi, M. Nami, M. Monavarian, A. Aragon, K. DaVico, F. Ayoub, S. Mishkat-Ul-Masabih, A. Rishinaramangalam, D. Feezell, “Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes”, Journal of Applied Physics 122, 035706 (2017).

  15. A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, "High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication", CLEO: Science and Innovations (2017).

  16. M. Monavarian, A. Rashidi, A. Aragon, S. H. Oh, M. Nami, S. P. DenBaars, D. Feezell, “Explanation of low efficiency droop in semipolar  InGaN/GaN LEDs through evaluation of carrier recombination coefficients”, arXiv preprint arXiv:1706.03135 (2017).

  17. A. Rashidi, M. Monavarian, A. Aragon, S. Okur, M. Nami, A. Rishinaramangalam, S. Mishkat-Ul-Masabih, and D. Feezell, "High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication", IEEE Photonics Technology Letters, Vol. 29, No. 4, (2017).

  18. M. Monavarian, M. Müller, S. Metzner, N. Izyumskaya, N. Can, S. Das, V. Avrutin, Ü. Özgür, F. Bertram, J. Christen, and H. Morkoç, "Effect of nano-porous SiNx interlayer on propagation of extended defects in semi-polar  (11-22)-orientated GaN", Phys. Status Solidi C, 1700024 (2017).                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                      

  19. Md B. Ullah, V. Avrutin, S. Li, S. Das, M. Monavarian, M. Toporkov, Ü. Özgür, Pierre Ruterana, and Hadis Morkoç. "Polarity Control and Residual Strain in ZnO Epilayers Grown by Molecular Beam Epitaxy on (0001)-GaN/Sapphire", Physica Status Solidi (RRL)-Rapid Research Letters 10, No. 9, 682–686 (2016). (Selected as Cover Picture of the Journal)

  20. M. A. Reshchikov, J. D. McNamara, F. Zhang, M. Monavarian, A. Usikov, H. Helava, Yu. Makarov, and H. Morkoç, "Zero-phonon line and fine structure of the yellow luminescence band in GaN", Physical Review B 94, 035201 (2016).

  21. M. Monavarian, "Comment on “Experimental study of the orientation dependence of indium incorporation in GaInN” [J. Cryst. Growth 433 (2016) 7–12]", Journal of Crystal Growth 445 (2016) 63-64.

  22. M. Monavarian, M. Müller, S. Metzner, N. Izyumskaya, N. Can, S. Das, V. Avrutin, Ü. Özgür, F. Bertram, J. Christen, and H. Morkoç, "Improvement of optical quality of semipolar (11-22) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth", Journal of Applied Physics 119, 145303 (2016).

  23. M. Monavarian, D. Rosales, B. Gil, N. Izyumskaya, S. Das, Ü. Özgür, H. Morkoç, and V. Avrutin, "Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974826 (2016).

  24. M. Monavarian, S. D. A. Hafiz, N. Izyumskaya, Ü. Özgür, H. Morkoç, and V. Avrutin, "Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semipolar GaN", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974827 (2016).

  25. M. Monavarian, S. Hafiz, Ü. Özgür, H. Morkoç, and V. Avrutin, "Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974825 (2016).

  26. S. Hafiz, N. Andrade, M. Monavarian, F. Zhang, V. Avrutin, H. Morkoç, and Ü. Özgür, "Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) light emitting diodes", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974828 (2016).                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                  

  27. F. Zhang, N. Can, S. Hafiz, M. Monavarian, S. Das, V. Avrutin, Ü. Özgür,  and H. Morkoç, "Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers", Applied Physics Letters 106, 181105 (2015).

  28. S. Hafiz, F. Zhang, M. Monavarian, V. Avrutin, H. Morkoç, Ü. Özgür, S. Metzner, F. Bertram, J. Christen, B. Gil, "Determination of carrier diffusion length in GaN", Journal of Applied Physics 117, 013106 (2015).

  29. M. Monavarian, S. Metzner, N. Izyumskaya, M. Müller, S. Okur, F. Zhang, N. Can, S. Das, V. Avrutin, Ü. Özgür, F. Bertram, J. Christen, H. Morkoç, "Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiNx interlayers", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93632I (2015).

  30. M. Monavarian, S. Metzner, N. Izyumskaya, S. Okur, F. Zhang, N. Can, S. Das, V. Avrutin, Ü. Özgür, F. Bertram, J. Christen, H. Morkoç, "Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93632P (2015).

  31. S. Okur, M. Monavarian, N. Izyumskaya, F. Zhang, V. Avrutin, H. Morkoc, U. Ozgur, S. Das, "Strong carrier localization in stacking faults in semipolar (11-22) GaN", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93632N (2015).

  32. S. D. Hafiz, F. Zhang, M. Monavarian, V. Avrutin, H. Morkoç, Ü. Özgür, "Enhancement of coherent acoustic phonons in InGaN multiple quantum wells", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93632J (2015). 

  33. N. Can, S. Okur, M. Monavarian, F. Zhang, V. Avrutin, H. Morkoç, A. Teke, Ü. Özgür, "Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature-dependent photoluminescence transients", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93632U (2015).

  34. D. Rosales, B. Gil, M. Monavarian, F. Zhang, S. Okur, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, "Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93630J (2015).                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                      

  35. D. Rosales, B. Gil, T. Bretagnon, B. Guizal, N. Izyumskaya, M. Monavarian, F. Zhang, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç, "Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells ", Journal of Applied Physics 116, 093517 (2014).

  36. D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoc, J.H. Leach, "Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells", Journal of Applied Physics 115, 073510 (2014).

  37. S. Hafiz, S. Metzner, F. Zhang, M. Monavarian, V. Avrutin, H. Morkoç, C. Karbaum, F. Bertram, J. Christen, B. Gil, Ü. Özgür, "Determination of carrier diffusion length in p-and n-type GaN", Proc. SPIE 8986, 89862C (2014).

  38. N. Izyumskaya, S. Okur, F. Zhang, M. Monavarian, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç, "Optical properties of m-plane GaN grown on patterned Si (112) substrates by MOCVD using a two-step approach", Proc. SPIE 8986, 898628 (2014).

  39. D. Rosales, B. Gil, T. Bretagnon, F. Zhang, S. Okur, M. Monavarian, N. Izioumskaia, V. Avrutin, Ü. Özgür, H. Morkoç, J.H. Leach, "Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs", Proc. SPIE 8986, 89860L (2014).

  40. S. Hafiz, F. Zhang, M. Monavarian, S. Okur, V. Avrutin, H. Morkoç, Ü. Özgür, "Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements", Proc. SPIE 9003, 90031R (2014).

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  1. M. Monavarian, A. Rashid, A. A. Aragon, S. H. Oh, A. K. Rishinaramangalam, S. P. DenBaars, and D. Feezell, Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes. Semiconductor-Today, February 9th, 2018.

  2. Md B. Ullah, V. Avrutin, S. Li, S. Das, M. Monavarian, M. Toporkov, U. Ozgur, Pierre Ruterana, and Hadis Morkoc. Polarity Control and Residual Strain in ZnO Epilayers Grown by Molecular Beam Epitaxy on (0001)-GaN/Sapphire. Advanced Science News, PSS Showcase 2017.

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  1. M. Monavarian, A. Rashid, A. A. Aragon, and D. Feezell, “High-Speed, Energy-Efficient Semipolar and Nonpolar LEDs with low Power Consumptions”, US Patent (Pre-filing).

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2017

2016

Popular and Technical Press Publications
Patents

2015

2014

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