Morteza Monavarian
I am currently a Postdoctoral Fellow at Center for High Technology Materials (CHTM), The University of New Mexico. My research focus is mainly on Semiconductor Electronic, Optoelectronic and Photonic Devices including LEDs, LDs, SLDs , VCSELs, Acoustic Phonon emitters, etc.
The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED), Banff, Canada
October 8-12, 2017
Compound Semiconductor Week (CSW) 2018, Boston, MA, USA
May 29-Jun 1, 2018
UPCOMING EVENTS
2018 Electronic Materials Conference, Santa Barbara, CA, USA
Jun 27-29, 2018
MY LATEST RESEARCH
Nonpolar and Semipolar InGaN/GaN LEDs for General Lighting and Visible Light Communication
Due to suppressed quantum confined Start effect (QCSE), nonpolar and semipolar LEDs have potentials for higher efficiency and speed at the same time. We demonstrated, for the first time, modulation bandwidth for nonpolar LEDs which is among the top reported values [IEEE Photonics Technology Letters 29, 381 (2017)].
Our analysis of bandwidth and IQE also enable us to compare ABC parameters of a semipolar LED with that of polar counterpart for the first time [Optics Express 25, 19343 (2017)]. The results proved the observation of low efficiency droop in semipolar (20-2-1) (57%) compared to c-plane (69%).
Nonpolar Nanoporous Lattice-Matched GaN DBRs for VCSELs
We have fabricated and tested the first nonpolar Lattice-matched nanoporous GaN DBR on free-standing substrate with low defect density with stopband centered around 450nm having 80nm width [manuscript is under preparation, to be submitted to Applied Physics Letters]. This is a large step toward achieving low threshold, high gain, and polarization-pinned InGaN VCSELs on nonpolar palnes.