Low-Threshold, Polarization-Pinned Vertical Cavity Surface Emitting Lasers (VCSELs)
Due to high material gain and large in-plane lattice anisotropy in non-polar m-plane, this orientations of GaN is the perfect candidate for realization of high-gain, polarization-pinned vertical cavity surface emitting lasers (VCSELs). In this project, we develop InGaN/GaN VCSELs on nonpolar free-standing GaN substrates (from Mitsubishi Chemical Corporation) with low defect density. We use several approaches to obtain high reflectivity bottom DBRs including lattice-matched nonpolar nanoporous lattice-matched GaN DBRs.
